Sergii Pavlyuk


















	Sergii Pavlyuk












POSITION 


Head of the laboratory "Optical Quantum Electronics"


 


 WORK EXPERIENCE 


 1972–1974 


Engineer


 Taras Shevchenko National University of Kyiv, Kyiv (Ukraine) 


 


 1974–1979 


Senior engineer


 Taras Shevchenko National University of Kyiv, Kyiv (Ukraine)  


 


 1979–1982 


Junior Researcher


 Taras Shevchenko National University of Kyiv, Kyiv (Ukraine) 


 


 1982–1985 


Senior Researcher


 Taras Shevchenko National University of Kyiv, Kyiv (Ukraine) 


 


 1985–1994 


Head of sector


 Special Design and Technology Bureau “Toroid”, Kyiv (Ukraine) 


 


 1994–2003 


Senior researcher
 

 Taras Shevchenko National University of Kyiv, Kyiv (Ukraine) 


 


 2003–Present 


Head of the laboratory
 

 Taras Shevchenko National University of Kyiv, Kyiv (Ukraine) 




  
  

 EDUCATION AND TRAINING 


 1971 


Master degree 


 Taras Shevchenko National University of Kyiv, Kyiv (Ukraine) 


 


 1981 


Ph.D. 


 Taras Shevchenko National University of Kiev, Kyiv (Ukraine) 





  


















   



	



Research Fields:

Physics




	

Previous and Current Research


     
  
  • Research of the mechanisms of irregularities formation in nanostructures at extreme currents with great non-uniform heating.
    • 




Future Projects and Goals


     
  
  • Research of redistribution effects in electron-hole plasma of semiconductors at gradients of carrier mobility and extreme densities of current.
    • 
 
  
  • Development of new methods of construction of semiconductor devices.
    • 
 

	


Methodological and Technical Expertise


     
  
  • condensed matter physics;
    • 
 
  
  • electrodynamics of continuous media;
    • 
 
  
  • effects connected with the redistribution of electron-hole plasma in semiconductors, including strong non-uniform heating.
    • 




Selected Publications



Добровольский В.Н., Павлюк С.П. 


 Дрейф электронно-дырочной плазмы, обусловленный градиентами подвижностей носителей заряда.    


"Наука"// ФТП, № 7, 1977, с.1377-1380.






Павлюк С.П. 


  Термічний градієнтно-дрейфовий домен в кремнійових діодах з формою, яка змінюється в напрямі протікання струму   


Вісник КУ, серія фіз.-мат. науки, 1999, вип.1, с. 297-301.






Dobrovolsky V., Pavljuk S., Rossokhaty V., Cristoloveanu S. 


   Silicon-on-Insulator Control Impact-Ionization-Avalanche Transistor 


Appl. Phys.Let., 2006. v. 88, 073502-073504. 






Нинидзе Г.К., Павлюк С.П.,  Ищук Л.В., Кушниренко В.В. 


 Использование КНИ-транзистора в качестве генератора колебаний напряжения.    


Технология и конструирование радиоэлектронной аппаратуры. - 2005. - № 3(57). C. 54 - 57.






V.Kislitsyn, S. Pavliuk, R.Soltys, V.Lozovski,G.Strilchuk. 


 Termal Rectifier Dased on p-n  jnction    


IEEE Transaction on electron devices  February, 2014, V.61, N 2 ,pp.548-551 






S.Pavlyuk, V.Grygoruk, L. Ishchuk, O. Oberemok. 


 GERMANIUM THERMICTOR   


J.of.electrical engineering. V.4,N1.Jan-Mar.2016,P 30-33.