Oleg Olikh

Oleg Olikh

POSITION: Professor, General Physics Department, Faculty of Physics



Assistant at the general physics department

Taras Shevchenko National University of Kyiv, Kyiv (Ukraine)

 2002 - 2021

Associate professor at the general physics department,

Taras Shevchenko National University of Kyiv, Kyiv (Ukraine)

 2021 - Present

Professor at the general physics department,

Taras Shevchenko National University of Kyiv, Kyiv (Ukraine)




Physics faculty of Taras Shevchenko University of Kyiv, master in solid state physics


Post-graduate course at the general physics department in Taras Shevchenko National University of Kyiv, Kyiv (Ukraine)


PhD Degree (Physics and Mathematics), solid state physics specialty

Taras Shevchenko National University of Kyiv, Kyiv (Ukraine)


Associate professor at the general physics department

Taras Shevchenko National University of Kyiv, Kyiv (Ukraine)


Doctor of Science Degree (Dr. Hab. , Physics and Mathematics), solid state physics specialty

Taras Shevchenko National University of Kyiv, Kyiv (Ukraine)


I. Puluj Prize of the National Academy of Sciences of Ukraine

Solar Energy. Physics of defects

Research Fields:

Previous and Current Research

The main research topic is the application of ultrasound to characterize and modify the properties of semiconductor structures, in particular silicon solar cells. For the first time, the charge transfer was investigated in silicon p-n and Schottky structures under ultrasound loading conditions, and the model of acoustically active complex defect is proposed. As well, the investigation deals with the determination of barrier structure parameters from current-voltage curves by using the metaheuristic methods. Besides, the deep learning-based approach for estimating the concentration of electrically active centers in barrier structures is proposed.


Fig.1. Schematic conduction band diagram, showing the difference between cases with (the top surface and the top contour plot) and without (the bottom surface and the bottom contour plot) ultrasound loading.

Fig.2. Model of coupled defect level recombination center behavior under ultrasound action.

Fig.3. Simulated dependencies of acoustically induced changes of capture cross section (a) and coupling parameter (b) on the vibration phase shift and acoustic wave displacement direction. The parameters are set to rin=10 nm, uA = 1 nm, and uD = 0.5 nm.

Fig.4. Scheme of deep learning-based approach for predicting iron concentration.




Development of physical base of both acoustically controlled modification and machine learning-oriented characterization for silicon solar cells. Project. 2020.02/0036. (National Research Foundation of Ukraine)

Future Projects and Goals

Ultrasound influence on current flow in semiconductor nanomaterials

Deep learning approach to determination of barrier structure parameters.

Ultrasonic processing of defect in solar cells.

Methodological and Technical Expertise

  • Curent-voltage, capacitance-voltage and photovoltaic measurements

  • Using of metaheuristic methods

  • Solid-state acoustics

  • Automatization of experiment

Selected Publications

1. Olikh O., Lytvyn P. «Defect engineering using microwave processing in SiC and GaAs», Semiconductor Science and Technology, 2022, vol.37, Is.7, 075006; https://doi.org/10.1088/1361-6641/ac6f17 (Q2)

2. Olikh O., Lozitsky O., Zavhorodnii O. «Estimation for iron contamination in Si solar cell by ideality factor: Deep neural network approach», Progress in Photovoltaics: Research and Applications, 2022, vol.30, is.6, p. 648-660; https://doi.org/10.1002/pip.3539 (Q1)

3. Olikh O., Kostylyov V., Vlasiuk V., Korkishko R., Olikh Ya., Chupryna R. «Features of FeB pair light-induced dissociation and repair in silicon n+-p-p+ structures under ultrasound loading», Journal of Applied Physics, 2021, vol.130, is.23, 235703; https://doi.org/10.1063/5.0073135 (Q2)

4. Gorb A.M., Korotchenkov O.A., Olikh O.Ya., Podolian A.O., Chupryna R.G. «Influence of γ-irradiation and ultrasound treatment on current mechanism in Au-SiO2-Si structure», Solid State Electronics, 2020, vol.165, 107712; https://doi.org/10.1016/j.sse.2019.107712 (Q2)

5. Olikh O.Ya. «Relationship between the ideality factor and the iron concentration in silicon solar cells», Superlattices and Microstructures, 2019, vol.136, 106309; https://doi.org/10.1016/j.spmi.2019.106309 (Q2)

6. Olikh O.Ya., Gorb A.M., Chupryna R.G., Pristay-Fenenkov O.V. «Acousto-defect interaction in irradiated and non-irradiated silicon n+–p structures», Journal of Applied Physics, 2018, vol.123, is.16, 161573; https://doi.org/10.1063/1.5001123 (Q2)

7. Olikh O.Ya., Voytenko K.V. «On the mechanism of ultrasonic loading effect in silicon-based Schottky diodes», Ultrasonics, 2016, vol.66, p. 1-3; https://doi.org/10.1016/j.ultras.2015.12.001(Q1)

8. Olikh O.Ya. «Review and test of methods for determination of the Schottky diode parameters», Journal of Applied Physics, 2015, vol.118, is.2, 024502; https://doi.org/10.1063/1.4926420 (Q2)

9. Olikh O.Ya. «Reversible influence of ultrasound on γ-irradiated Mo/n-Si Schottky barrier structure», Ultrasonics, 2015, vol.56, p. 545-550; https://doi.org/10.1016/j.ultras.2014.10.008(Q1)

10.          Olikh O.Ya. «Non-Monotonic g-Ray Influence on Mo/n-Si Schottky Barrier Structure Properties», Nuclear Science, IEEE Transactions on, 2013, vol.60, is.1, part 2, p.394-401; https://doi.org/10.1109/TNS.2012.2234137(Q1)



https://orcid.org/0000-0003-0633-5429; https://scholar.google.com.ua/citations?user=HmNJyT8AAAAJ&hl=ua;



Homepage: https://gen.phys.univ.kiev.ua/280-olikh/

e-mail: olegolikh@knu.ua